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| Semiconductor STK0765F Power MOSFET Features * Low Crss * Low gate charge. * Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Package Code TO-220F-3L Outline Dimensions 3.05~3.35 9.80~10.20 unit : mm 2.60~3.00 15.40~15.80 12.20~12.60 9.10~9.30 12.40~13.00 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gate 2. Drain 3. Source KST-H038-003 1 STK0765F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Drain power dissipation (Tc=25) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID IDP PD EAS IAR EAR TJ Tstg Rating 650 30 TC=25 TC=100 28 40 420 5.2 14.7 150 -55~150 7 4.4 (TC=25) Unit V V A A A W mJ A mJ Thermal Resistance Characteristic Thermal resistance junction-case Thermal resistance Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 3.125 62.5 Units /W KST-H038-003 2 STK0765F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Static drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250 , VGS=0 ID=250 , VDS= VGS VDS=650V, VGS=0 VDS=0V, VGS=30V VGS=10V, ID=3.5A VDS=5V, ID=3.5A VGS=0V, VDS=25V f=1 Min. Typ. Max. Unit 650 2.0 3.9 6.4 881 123 19 18 19 72 28 49 8.4 22.1 4.0 10 100 1.2 nC ns pF V V A nA S VDD=325V, ID=7A RG=25 Fig. 13 - - VDS=520V, VGS=10V, ID=7A Fig. 12 - - Source-Drain Diode Ratings and Characteristics Characteristic Source current (DC) Source current (Pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IS ISP VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=7A IS=7A, VGS=0V dIS/dt=100A/ Min - Typ 320 2.4 (TC=25) Max Units 7 28 1.4 A V ns uC Note ; Repetitive rating : Pulse width limited by maximum junction temperature L=15.7mH, IAS=7A, VDD=50V, RG=27 Pulse Test : Pulse width 400 , Duty cycle 2% Essentially independent of operating temperature KST-H038-003 3 STK0765F Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KST-H038-003 4 STK0765F Fig. 7 V(BR)DSS - TC Fig. 8 Safe Operating Area Fig. 11 Thermal Response KST-H038-003 5 STK0765F Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Switching Time Test Circuit & Waveform Fig. 14 EAS Test Circuit & Waveform KST-H038-003 6 STK0765F Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform KST-H038-003 7 STK0765F The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KST-H038-003 8 |
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